![High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fs41598-019-49727-4/MediaObjects/41598_2019_49727_Fig5_HTML.png)
High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports
![Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-021-03557-4/MediaObjects/11671_2021_3557_Fig1_HTML.png)
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text
![Materials | Free Full-Text | Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology | HTML Materials | Free Full-Text | Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology | HTML](https://www.mdpi.com/materials/materials-10-00432/article_deploy/html/images/materials-10-00432-g001.png)
Materials | Free Full-Text | Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology | HTML
![Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers: Applied Physics Letters: Vol 99, No 17 Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers: Applied Physics Letters: Vol 99, No 17](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.3655903&id=images/medium/1.3655903.figures.f1.gif)
Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers: Applied Physics Letters: Vol 99, No 17
560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
Disruptive Substrate Technology for Direct Green and Red Micro LEDs_News_Compound semiconductor wafer
![Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes: Journal of Applied Physics: Vol 114, No 17 Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes: Journal of Applied Physics: Vol 114, No 17](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4828488&id=images/medium/1.4828488.figures.f1.gif)
Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes: Journal of Applied Physics: Vol 114, No 17
![Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0169433220331639-ga1.jpg)
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect
![Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fs41598-019-40095-7/MediaObjects/41598_2019_40095_Fig1_HTML.png)
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports
![Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-019-40120-9/MediaObjects/41598_2019_40120_Fig1_HTML.png)
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
![PDF] Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes | Semantic Scholar PDF] Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/d6bf6289633cf7882f8e38d744c3375b3abdd7d1/2-Figure2-1.png)